Impact Ionization and Bell-Shaped Gate Leakage at Room Temperature and 10 K in GaInAs/AlInAs pHEMTs on InP Substrates
dc.contributor.author
Alt, Andreas R.
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-09T08:05:00Z
dc.date.available
2017-06-09T08:05:00Z
dc.date.issued
2010
dc.identifier.uri
http://hdl.handle.net/20.500.11850/26371
dc.language.iso
en
dc.publisher
Technische Universität Darmstadt
dc.title
Impact Ionization and Bell-Shaped Gate Leakage at Room Temperature and 10 K in GaInAs/AlInAs pHEMTs on InP Substrates
dc.type
Other Conference Item
ethz.event
34th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010)
ethz.event.location
Darmstadt/Seeheim, Germany
ethz.event.date
May 17-19, 2010
ethz.notes
Conference lecture on 19 May 2010.
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-09T08:05:28Z
ethz.source
ECIT
ethz.identifier.importid
imp59364d67c442a16720
ethz.ecitpid
pub:44856
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-19T10:44:20Z
ethz.rosetta.lastUpdated
2021-02-14T06:46:26Z
ethz.rosetta.versionExported
true
ethz.COinS
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