
Open access
Date
2018Type
- Journal Article
Citations
Cited 37 times in
Web of Science
Cited 37 times in
Scopus
ETH Bibliography
yes
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Abstract
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable
platform for quantum information processing and quantum simulations. For the operation of
quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the
quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task,
because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the
automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum
dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in
scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of
tuning semiconductor quantum dots for quantum information processing and quantum simulation. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000278721Publication status
publishedExternal links
Journal / series
Applied Physics LettersVolume
Pages / Article No.
Publisher
American Institute of PhysicsOrganisational unit
03833 - Wegscheider, Werner / Wegscheider, Werner
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Show all metadata
Citations
Cited 37 times in
Web of Science
Cited 37 times in
Scopus
ETH Bibliography
yes
Altmetrics