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dc.contributor.author
Montes Bajo, Miguel
dc.contributor.author
Tamayo-Arriola, Julen
dc.contributor.author
Hugues, Maxime
dc.contributor.author
Ulloa, Jose M.
dc.contributor.author
Le Biavan, Nolwenn
dc.contributor.author
Peretti, Romain
dc.contributor.author
Julien, François H.
dc.contributor.author
Faist, Jérome
dc.contributor.author
Chauveau, Jean-Michel
dc.contributor.author
Hierro, Adrian
dc.date.accessioned
2018-08-16T13:10:25Z
dc.date.available
2018-08-15T05:01:15Z
dc.date.available
2018-08-16T13:10:25Z
dc.date.issued
2018-08-06
dc.identifier.other
10.1103/PhysRevApplied.10.024005
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/282591
dc.identifier.doi
10.3929/ethz-b-000282591
dc.description.abstract
Intersubband (ISB) transitions are of high significance for light-emitting and light-detecting devices in the infrared and, when involving large electron densities, for plasmonics and strong light-matter coupling physics. Here it is observed that the simultaneously occurring fundamental and excited-state ISB transitions in highly-doped, m-plane ZnO/MgxZn1−xO multiple quantum wells, couple into a single collective oscillation: the multisubband plasmon (MSP). With 2D electron densities up to 4×1013cm−2, an outstanding regime is reached in which the observed MSP frequency is three times larger than that of the fundamental ISB transition as a result of depolarization. This effect is analyzed using a dielectric tensor for ZnO including the interaction of the light with the lattice, the in-plane free electrons, and the off-plane MSP. The impact of the broadening of the MSP and its interaction with phonons is discussed. The results presented here show the potential of ZnO/MgxZn1−xO for infrared optoelectronic applications, which can be extended to the THz range with appropriate design of the quantum wells.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
American Physical Society
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.title
Multisubband Plasmons in Doped Zn O Quantum Wells
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
ethz.journal.title
Physical Review Applied
ethz.journal.volume
10
en_US
ethz.journal.issue
2
en_US
ethz.pages.start
024005
en_US
ethz.size
8 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
College Park, MD, USA
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2018-08-15T05:02:13Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2018-08-16T13:10:30Z
ethz.rosetta.lastUpdated
2018-12-02T13:08:30Z
ethz.rosetta.versionExported
true
ethz.COinS
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