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dc.contributor.author
Lin, Tsung-Han
dc.contributor.supervisor
Copéret, Christophe
dc.contributor.supervisor
Wood, Vanessa
dc.contributor.supervisor
Shih, C.-J.
dc.date.accessioned
2018-10-08T07:50:00Z
dc.date.available
2018-10-05T14:27:24Z
dc.date.available
2018-10-08T07:50:00Z
dc.date.issued
2018
dc.identifier.uri
http://hdl.handle.net/20.500.11850/293820
dc.identifier.doi
10.3929/ethz-b-000293820
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
ETH Zurich
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.title
Conformal Deposition of Metal Silicide Layer on Si Wafer for Transistor Technology via a Molecular Approach
en_US
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
148 p.
en_US
ethz.code.ddc
DDC - DDC::6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.code.ddc
DDC - DDC::5 - Science::540 - Chemistry
ethz.identifier.diss
25474
en_US
ethz.publication.place
Zurich
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02020 - Dep. Chemie und Angewandte Biowiss. / Dep. of Chemistry and Applied Biosc.::02513 - Laboratorium für Anorganische Chemie / Laboratory of Inorganic Chemistry::03872 - Copéret, Christophe / Copéret, Christophe
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02020 - Dep. Chemie und Angewandte Biowiss. / Dep. of Chemistry and Applied Biosc.::02513 - Laboratorium für Anorganische Chemie / Laboratory of Inorganic Chemistry::03872 - Copéret, Christophe / Copéret, Christophe
en_US
ethz.date.deposited
2018-10-05T14:27:24Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2018-10-08T07:50:57Z
ethz.rosetta.lastUpdated
2021-02-15T01:59:40Z
ethz.rosetta.versionExported
true
ethz.COinS
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