Experimental characterization of critical high-electric field spots in power semiconductors by planar and scanning collimated alpha sources
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Date
2018-09Type
- Journal Article
Publication status
publishedExternal links
Journal / series
Microelectronics ReliabilityVolume
Pages / Article No.
Publisher
ElsevierSubject
Power device reliability and robustness; Critical high carrier multiplication spots; Planar and collimated alpha source; Alpha source scanningOrganisational unit
03380 - Huang, Qiuting (emeritus) / Huang, Qiuting (emeritus)
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