Investigation of the Electrode Materials in Conductive Bridging RAM from First-Principle
- Conference Paper
Conductive bridging random access memories (CBRAM) are emerging non-volatile data storage devices whose switching mechanisms are not fully understood. Here, we present a modelling framework based on ab-initio simulations to investigate CBRAM cells. It combines density-functional theory and the Non-equilibrium Greens Function formalism. Realistic metallic filaments connecting two electrodes are constructed and their ballistic transport characteristics studied. For a given filament the type of counter electrode material has little influence on the magnitude of the ON-state current, but affects its spatial distribution. The conductance mainly depends on the material of the active electrode and the shape of the thinnest part of the filament. Show more
Book title2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Pages / Article No.
Organisational unit03925 - Luisier, Mathieu / Luisier, Mathieu
159314 - Physics-based Modeling of Electronic Devices at the Nanometer Scale (SNF)
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