Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast
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Date
2005Type
- Conference Paper
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Microelectronics ReliabilityVolume
Pages / Article No.
Publisher
ElsevierEvent
Organisational unit
03228 - Fichtner, Wolfgang
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ETH Bibliography
yes
Altmetrics