High-speed and low-noise AlInN/GaN HEMTs on SiC

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Author

Date

2011-02

Type

Conference Paper

ETH Bibliography

yes

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Publication status

published

External links

Journal / series

Physica Status Solidi A

Volume

208(2)

Pages / Article No.

429 - 433

Publisher

Wiley

Event

37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31 - June 4, 2010

Subject

AlInN/GaN; High electron mobility transistors; Microwave noise; Millimeter-wave transistors

Organisational unit

03721 - Bolognesi, Colombo / Bolognesi, Colombo

Notes

Received 15 June 2010, Revised 2 August 2010, Accepted 7 August 2010, Published online 21 October 2010.

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