MOCVD of hafnium silicate films obtained from a single-source precusor [i.e. precursor] on silicon and germanium for gate-dielectric applications

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Author
Lemberger, Martin
Schön, Florian
Dirnecker, Tobias
Jank, Michael Peter Max
Frey, Lothar
Ryssel, Heiner
Paskaleva, Albena
Zürcher, Stefan
Bauer, Anton Johann
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Date
2007
Type
  • Conference Paper
Publication status
published
External links
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Journal / series
Chemical vapor deposition
Volume
13(2-3)
Pages / Article No.
105 - 111
Publisher
Wiley-VCH
Event
EUROCVD-15, September 4-9, 2005
Subject
electrical properties; germanium wafer; hafnium silicate; MOCVD; single-source precursors
Organisational unit
03389 - Spencer, Nicholas  
Notes
Received 19 April 2006, Revised 8 December 2006.
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Citations
Cited 3 times in Web of Science
Cited 4 times in Scopus
ETH Bibliography
yes
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