MOCVD of hafnium silicate films obtained from a single-source precusor [i.e. precursor] on silicon and germanium for gate-dielectric applications
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Author
Lemberger, Martin
Schön, Florian
Dirnecker, Tobias
Jank, Michael Peter Max
Frey, Lothar
Ryssel, Heiner
Paskaleva, Albena
Zürcher, Stefan
Bauer, Anton Johann
Date
2007Type
- Conference Paper
Publication status
publishedJournal / series
Chemical vapor depositionVolume
Pages
Publisher
Wiley-VCHEvent
Subject
electrical properties; germanium wafer; hafnium silicate; MOCVD; single-source precursorsOrganisational unit
03389 - Spencer, Nicholas
Notes
Received 19 April 2006, Revised 8 December 2006.More
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