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dc.contributor.author
Butler, E.M.
dc.date.accessioned
2017-06-09T10:39:08Z
dc.date.available
2017-06-09T10:39:08Z
dc.date.issued
2004
dc.identifier.isbn
0-7803-8684-1
dc.identifier.other
10.1109/IEDM.2004.1419233
dc.identifier.uri
http://hdl.handle.net/20.500.11850/33731
dc.language.iso
en
dc.publisher
IEEE Service Center
dc.title
Exploring the limit of strain-induced performance gain in p- and n-SSDOI-MOSFETs
dc.type
Conference Paper
ethz.book.title
IEEE International Electron Devices Meeting 2004, IEMD technical digest 50th annual meeting
ethz.pages.start
601
ethz.pages.end
604
ethz.event
50th IEEE International Electron Devices Meeting 2004
ethz.event.location
San Francisco, CA
ethz.event.date
December 13-15, 2004
ethz.notes
.
ethz.identifier.wos
ethz.identifier.nebis
004912052
ethz.publication.place
Piscataway, N.J.
ethz.publication.status
published
ethz.date.deposited
2017-06-09T10:39:13Z
ethz.source
ECIT
ethz.identifier.importid
imp59364df07269161143
ethz.ecitpid
pub:54624
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-14T17:25:39Z
ethz.rosetta.lastUpdated
2017-07-14T17:25:39Z
ethz.rosetta.versionExported
true
ethz.COinS
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