Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs

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Author
Stark, Roger
Kovacevic-Badstuebner, Ivana
Tsibizov, Alexander
Kakarla, Bhagyalakshmicc
Jü, Yanrui
Jaeger, Beat
Ziemann, Thomascc
Grossner, Ulrikecc
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Date
2018
Type
    Conference Paper
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-b-000343627
Publication status
published
External links
Book title
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Pages / Article No.
407 - 410
Publisher
IEEE
Event
30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, USA, May 13-17, 2018
Organisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike  
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Citations
Cited 3 times in Web of Science
Cited 6 times in Scopus
ETH Bibliography
yes
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