Variability in the Characteristics of InGaAsSb/InAs Tunnel FETs Caused by Dopant-induced Traps - Research Collection

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Author

Luisier, Mathieu

Schenk, Andreas

Date

2019

Type

Conference Paper

Citations

Cited 1 times in Scopus

ETH Bibliography

yes

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Publication status

published

External links

https://doi.org/10.1109/EDTM.2019.8731238

Book title

2019 Electron Devices Technology and Manufacturing Conference (EDTM 2019)

Pages / Article No.

112 - 114

Publisher

IEEE

Event

3rd Electron Devices Technology and Manufacturing Conference (EDTM 2019), Singapore, Singapore, March 12-15, 2019

Subject

Tunnel FET; Variability; Trap-assisted tunneling; Alloy band tails

Organisational unit

03925 - Luisier, Mathieu / Luisier, Mathieu

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Citations

Cited 1 times in Scopus

ETH Bibliography

yes

Altmetrics