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dc.contributor.author
Luisier, Mathieu
dc.contributor.author
Schenk, Andreas
dc.contributor.author
Fichtner, Wolfgang
dc.date.accessioned
2017-06-09T11:11:52Z
dc.date.available
2017-06-09T11:11:52Z
dc.date.issued
2006
dc.identifier.isbn
978-1-4244-0438-4
dc.identifier.isbn
1-424-40439-8
dc.identifier.isbn
1-424-40438-X
dc.identifier.other
10.1109/IEDM.2006.346737
dc.identifier.uri
http://hdl.handle.net/20.500.11850/35325
dc.language.iso
en
dc.publisher
IEEE
dc.title
Three-dimensional full-band Simulations of Si nanowire transistors
dc.type
Conference Paper
ethz.book.title
International Electron Devices Meeting, 2006 : IEDM '06 ; 11 - 13 Dec. 2006
ethz.pages.start
563
ethz.pages.end
566
ethz.event
IEEE International Electron Devices Meeting
ethz.event.location
San Francisco, CA, USA
ethz.event.date
December 11-13, 2006
ethz.notes
.
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-09T11:12:22Z
ethz.source
ECIT
ethz.identifier.importid
imp59364e0f1b68020063
ethz.ecitpid
pub:56564
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T04:35:42Z
ethz.rosetta.lastUpdated
2017-07-13T04:35:42Z
ethz.rosetta.versionExported
true
ethz.COinS
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