Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP- and WS2-Based n-MOSFETs for Future Technology Nodes—Part II: Circuit-Level Comparison
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Date
2019-08Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEEOrganisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
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Continues: http://hdl.handle.net/20.500.11850/356727
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ETH Bibliography
yes
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