Show simple item record

dc.contributor.author
Calvo Ruiz, Diego
dc.contributor.author
Saranovac, Tamara
dc.contributor.author
Han, Daxin
dc.contributor.author
Hambitzer, Anna
dc.contributor.author
Arabhavi, Akshay M.
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2019-11-08T15:06:42Z
dc.date.available
2019-10-03T12:03:20Z
dc.date.available
2019-10-04T06:55:01Z
dc.date.available
2019-11-08T15:06:42Z
dc.date.issued
2019-11
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/ted.2019.2940638
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/368167
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Direct current (DC)
en_US
dc.subject
GaInAs
en_US
dc.subject
InAs channel
en_US
dc.subject
InP high electron mobility transistors (HEMTs)
en_US
dc.subject
Noise figure
en_US
dc.subject
Radio frequency (RF)
en_US
dc.title
InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs
en_US
dc.type
Journal Article
dc.date.published
2019-10-02
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
66
en_US
ethz.journal.issue
11
en_US
ethz.journal.abbreviated
IEEE trans. electron devices
ethz.pages.start
4685
en_US
ethz.pages.end
4691
en_US
ethz.grant
Surfactant-Assisted Growth of Pseudomorphic InAs Channels for Ultralow Low-Noise Cryogenic Electronics
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.grant.agreementno
169738
ethz.grant.fundername
SNF
ethz.grant.funderDoi
10.13039/501100001711
ethz.grant.program
Projektförderung in Mathematik, Natur- und Ingenieurwissenschaften (Abteilung II)
ethz.date.deposited
2019-10-03T12:03:30Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2020-02-15T22:26:55Z
ethz.rosetta.lastUpdated
2021-02-15T06:38:53Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=InAs%20Channel%20Inset%20Effects%20on%20the%20DC,%20RF,%20and%20Noise%20Properties%20of%20InP%20pHEMTs&rft.jtitle=IEEE%20Transactions%20on%20Electron%20Devices&rft.date=2019-11&rft.volume=66&rft.issue=11&rft.spage=4685&rft.epage=4691&rft.issn=0018-9383&1557-9646&rft.au=Calvo%20Ruiz,%20Diego&Saranovac,%20Tamara&Han,%20Daxin&Hambitzer,%20Anna&Arabhavi,%20Akshay%20M.&rft.genre=article&
 Search print copy at ETH Library

Files in this item

FilesSizeFormatOpen in viewer

There are no files associated with this item.

Publication type

Show simple item record