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dc.contributor.author
Shulga, Artem G.
dc.contributor.author
Yamamura, Akifumi
dc.contributor.author
Tsuzuku, Kotaro
dc.contributor.author
Dragoman, Ryan M.
dc.contributor.author
Dirin, Dmitry
dc.contributor.author
Watanabe, Shun
dc.contributor.author
Kovalenko, Maksym V.
dc.contributor.author
Takeya, Jun
dc.contributor.author
Loi, Maria A.
dc.date.accessioned
2019-10-07T06:53:21Z
dc.date.available
2019-10-05T03:38:47Z
dc.date.available
2019-10-07T06:53:21Z
dc.date.issued
2019-09
dc.identifier.issn
2365-709X
dc.identifier.issn
2365-709X
dc.identifier.other
10.1002/admt.201900054
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/368508
dc.identifier.doi
10.3929/ethz-b-000368508
dc.description.abstract
The use of colloidal quantum dots (CQDs) as active layers for the transistors in integrated circuits is often impeded by the poor compatibility of CQDs films with the standard lithographic processing. Successful patterning of tetrabutylammonium iodide‐treated PbS CQDs films is demonstrated on (3‐aminopropyl)triethoxysilane (APTES) functionalized glass or aluminum oxide surfaces, using lithography. Short‐channel (4 µm) field‐effect transistors (FETs) with patterned gate electrode and patterned CQDs film as active layer with electron mobility of 0.1 cm2 V−1 s−1, threshold voltage of −0.29 V, and cutoff frequency of 400 kHz are demonstrated. Furthermore, the lithographic processing does not compromise the optical properties of the film, as evidenced by the photoresponse measurements of the FETs (11.6 mA W−1 at 920 nm and 26.7 mA W−1 at 440 nm). These results further demonstrate CQDs as a potential material for optoelectronic applications, where medium frequency operation is required.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Wiley
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject
Cutoff-frequency
en_US
dc.subject
Field-effect transistors
en_US
dc.subject
Photodetection
en_US
dc.subject
Quantum dots
en_US
dc.title
Patterned Quantum Dot Photosensitive FETs for Medium Frequency Optoelectronics
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
dc.date.published
2019-08-05
ethz.journal.title
Advanced Materials Technologies
ethz.journal.volume
4
en_US
ethz.journal.issue
9
en_US
ethz.pages.start
1900054
en_US
ethz.size
6 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Weinheim
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2019-10-05T03:38:51Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2019-10-07T06:53:32Z
ethz.rosetta.lastUpdated
2019-10-07T06:53:32Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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