Investigation of Source Starvation in High-Transconductance III-V Quantum-Well MOSFETs
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Date
2019-11Type
- Journal Article
Publication status
publishedExternal links
Journal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEESubject
Access region; III–V; interface traps; quantum transport (QT); quantum-well (QW) MOSFET; quasi-equilibrium; source starvation; transconductanceOrganisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
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