Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator
dc.contributor.author
Pernstich, K.P.
dc.contributor.author
Haas, Simon
dc.contributor.author
Oberhoff, D.
dc.contributor.author
Goldmann, C.
dc.contributor.author
Gundlach, D.J.
dc.contributor.author
Batlogg, Bertram
dc.contributor.author
Rashid, A.N.
dc.contributor.author
Schitter, G
dc.date.accessioned
2017-06-09T12:13:31Z
dc.date.available
2017-06-09T12:13:31Z
dc.date.issued
2004-12
dc.identifier.issn
0021-8979
dc.identifier.issn
1089-7550
dc.identifier.other
10.1063/1.1810205
dc.identifier.uri
http://hdl.handle.net/20.500.11850/38105
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator
dc.type
Journal Article
ethz.journal.title
Journal of Applied Physics
ethz.journal.volume
96
ethz.journal.issue
11
ethz.journal.abbreviated
J. Appl. Physi.
ethz.pages.start
6431
ethz.pages.end
6438
ethz.size
8 p.
ethz.notes
Received 19 July 2004, Accepted 3 September 2004.
ethz.identifier.wos
ethz.identifier.nebis
000037502
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
03255 - Günter, Peter
ethz.leitzahl.certified
03255 - Günter, Peter
ethz.date.deposited
2017-06-09T12:14:01Z
ethz.source
ECIT
ethz.identifier.importid
imp59364e47eefdb59238
ethz.ecitpid
pub:61136
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T08:56:24Z
ethz.rosetta.lastUpdated
2022-03-28T09:57:56Z
ethz.rosetta.versionExported
true
ethz.COinS
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