Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation
Metadata only
Date
2011Type
- Journal Article
Publication status
publishedExternal links
Journal / series
IEEE Electron Device LettersVolume
Pages / Article No.
Publisher
IEEESubject
AlGaN/GaN; High-electron mobility transistor (HEMT); Implant isolation; Millimeter-wave transistorsOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
Notes
Published 7 June 2011, Date of current version 25 July 2011.More
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