Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz

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Autor(in)
Teppati, Valeria
Zeng, Yuping
Ostinelli, Olivier
Bolognesi, Colombo R.
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Datum
2011-07
Typ
    Journal Article
Publikationsstatus
published
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Zeitschrift / Serie
IEEE Electron Device Letters
Band
32(7)
Seiten / Artikelnummer
886 - 888
Verlag
IEEE
Thema
Double heterojunction bipolar transistors (HBTs) (DHBTs); InP/GaAsSb; Load pull; Millimeter-wave transistors
Organisationseinheit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Anmerkungen
Manuscript received 15 March 2011, Revised 4 April 2011, Accepted 6 April 2011, Date of publication 19 May 2011, Date of current version 29 June 2011.
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9 Zitate in Web of Science
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yes
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