Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz
Metadata only
Date
2011-07Type
- Journal Article
Publication status
publishedExternal links
Journal / series
IEEE Electron Device LettersVolume
Pages / Article No.
Publisher
IEEESubject
Double heterojunction bipolar transistors (HBTs) (DHBTs); InP/GaAsSb; Load pull; Millimeter-wave transistorsOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
Notes
Manuscript received 15 March 2011, Revised 4 April 2011, Accepted 6 April 2011, Date of publication 19 May 2011, Date of current version 29 June 2011.More
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