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dc.contributor.author
Teppati, Valeria
dc.contributor.author
Zeng, Yuping
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-09T13:22:44Z
dc.date.available
2017-06-09T13:22:44Z
dc.date.issued
2011-07
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2011.2143690
dc.identifier.uri
http://hdl.handle.net/20.500.11850/38936
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Double heterojunction bipolar transistors (HBTs) (DHBTs)
dc.subject
InP/GaAsSb
dc.subject
Load pull
dc.subject
Millimeter-wave transistors
dc.title
Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
32
ethz.journal.issue
7
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
886
ethz.pages.end
888
ethz.notes
Manuscript received 15 March 2011, Revised 4 April 2011, Accepted 6 April 2011, Date of publication 19 May 2011, Date of current version 29 June 2011.
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-09T13:23:03Z
ethz.source
ECIT
ethz.identifier.importid
imp59364e584138c44267
ethz.ecitpid
pub:62609
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T09:02:04Z
ethz.rosetta.lastUpdated
2021-02-14T07:57:06Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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