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dc.contributor.author
Quan, Wei
dc.contributor.author
Arabhavi, Akshay M.
dc.contributor.author
Marti, Diego
dc.contributor.author
Hamzeloui, Sara
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2020-01-31T11:16:01Z
dc.date.available
2020-01-30T11:29:58Z
dc.date.available
2020-01-31T11:16:01Z
dc.date.issued
2019-11-03
dc.identifier.isbn
978-1-7281-0586-4
en_US
dc.identifier.isbn
978-1-7281-0587-1
en_US
dc.identifier.other
10.1109/BCICTS45179.2019.8972718
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/395804
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
InP/GaAsSb
en_US
dc.subject
Double heterojunction bipolar transistors (DHBTs)
en_US
dc.subject
Power-added efficiency
en_US
dc.subject
Maximal output power
en_US
dc.subject
Power gain
en_US
dc.subject
Load-pull measurements
en_US
dc.subject
W-band
en_US
dc.title
InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz
en_US
dc.type
Conference Paper
dc.date.published
2020-01-30
ethz.book.title
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
en_US
ethz.pages.start
8972718
en_US
ethz.size
4 p.
en_US
ethz.event
2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2019)
en_US
ethz.event.location
Nashville, TN, USA
en_US
ethz.event.date
November 3-6, 2019
en_US
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.date.deposited
2020-01-30T11:30:08Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2020-01-31T11:16:11Z
ethz.rosetta.lastUpdated
2021-02-15T07:46:07Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=InP/GaAsSb%20DHBT%20Power%20Performance%20with%2030%25%20Class-A%20PAE%20at%2094%20GHz&rft.date=2019-11-03&rft.spage=8972718&rft.au=Quan,%20Wei&Arabhavi,%20Akshay%20M.&Marti,%20Diego&Hamzeloui,%20Sara&Ostinelli,%20Olivier&rft.isbn=978-1-7281-0586-4&978-1-7281-0587-1&rft.genre=proceeding&rft_id=info:doi/10.1109/BCICTS45179.2019.8972718&rft.btitle=2019%20IEEE%20BiCMOS%20and%20Compound%20semiconductor%20Integrated%20Circuits%20and%20Technology%20Symposium%20(BCICTS)
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