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dc.contributor.author
Chen, Ming
dc.contributor.author
Wehrs, Juri
dc.contributor.author
Sologubenko, Alla S.
dc.contributor.author
Rabier, Jacques
dc.contributor.author
Michler, Johann
dc.contributor.author
Wheeler, Jeffrey M.
dc.date.accessioned
2020-02-14T08:13:57Z
dc.date.available
2020-02-14T03:22:22Z
dc.date.available
2020-02-14T08:13:57Z
dc.date.issued
2020-04
dc.identifier.issn
0264-1275
dc.identifier.issn
1873-4197
dc.identifier.other
10.1016/j.matdes.2020.108506
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/399358
dc.identifier.doi
10.3929/ethz-b-000399358
dc.description.abstract
Silicon is brittle at ambient temperature and pressure, but using micro-scale samples fabricated by focused ion beam (FIB) plasticity has been observed. However, typical drawbacks of this methodology are FIB-damage and surface amorphization. In this study, lithographic etching was employed to fabricate a large number of 〈100〉-oriented Si pillars with various diameters in the micro-scale. This allowed quantitative study of plasticity and the size effect of FIB-free Si in the brittle temperature range (25–500 °C) by conducting monotonic and transient microcompression in situ in the scanning electron microscope (SEM). Lithographic pillars achieved the ideal strength in temperature range of 25–100 °C and displayed significantly higher strengths (30–60%) than FIB-machined pillars because of the undamaged surface and the oxide layer confinement. The activation energy of deformation revealed a transition in dislocation mechanisms as a function of temperature. Strain rate sensitivity and activation volume measured from strain rate jump and stress relaxation tests indicated the surface nucleation of kink-pairs associated with the constricted dislocation motion in Si during deformation at temperatures below the brittle-ductile transition. A modified analytical model is proposed to accurately evaluate the size-dependent strength of covalent crystalline Si. The weak size effect observed in Si is attributed to the surface nucleation of dislocations and high lattice friction during their motion.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Elsevier
en_US
dc.rights.uri
http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject
Silicon
en_US
dc.subject
Lithography
en_US
dc.subject
Plasticity
en_US
dc.subject
Activation parameters
en_US
dc.subject
Transient testing
en_US
dc.title
Size-dependent plasticity and activation parameters of lithographically-produced silicon micropillars
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
dc.date.published
2020-01-21
ethz.journal.title
Materials & Design
ethz.journal.volume
189
en_US
ethz.journal.abbreviated
Mater. des.
ethz.pages.start
108506
en_US
ethz.size
13 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.grant
DiaMicro - Using Nanomechanics to Understand Plasticity in Diamond-structured Crystals
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Oxford
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::02645 - Institut für Metallforschung / Institute of Metals Research::03692 - Spolenak, Ralph / Spolenak, Ralph
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02891 - ScopeM / ScopeM
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::02645 - Institut für Metallforschung / Institute of Metals Research::03692 - Spolenak, Ralph / Spolenak, Ralph
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02891 - ScopeM / ScopeM
ethz.grant.agreementno
166094
ethz.grant.fundername
SNF
ethz.grant.funderDoi
10.13039/501100001711
ethz.grant.program
Projekte MINT
ethz.date.deposited
2020-02-14T03:22:30Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2020-02-14T08:14:07Z
ethz.rosetta.lastUpdated
2022-03-29T00:59:43Z
ethz.rosetta.versionExported
true
ethz.COinS
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