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dc.contributor.author
Mohan, A.
dc.contributor.author
Gallo, P.
dc.contributor.author
Felici, M.
dc.contributor.author
Dwir, B.
dc.contributor.author
Rudra, A.
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Kapon, E.
dc.date.accessioned
2017-06-09T16:57:51Z
dc.date.available
2017-06-09T16:57:51Z
dc.date.issued
2011
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.3601916
dc.identifier.uri
http://hdl.handle.net/20.500.11850/40504
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Engineering conduction and valence band states in site-controlled pyramidal quantum dots
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
98
ethz.journal.issue
25
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
253102
ethz.size
3 p.
ethz.notes
Received 24 March 2011, Accepted 31 May 2011, Published online 21 June 2011.
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-09T16:58:01Z
ethz.source
ECIT
ethz.identifier.importid
imp59364e96d5c0c38363
ethz.ecitpid
pub:67807
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T18:22:52Z
ethz.rosetta.lastUpdated
2022-03-28T10:06:30Z
ethz.rosetta.versionExported
true
ethz.COinS
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