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dc.contributor.author
Buzzo, Marco
dc.contributor.author
Ciappa, Mauro
dc.contributor.author
Fichtner, Wolfgang
dc.date.accessioned
2017-06-09T17:01:35Z
dc.date.available
2017-06-09T17:01:35Z
dc.date.issued
2006
dc.identifier.isbn
978-0-87170-844-1
dc.identifier.uri
http://hdl.handle.net/20.500.11850/40640
dc.language.iso
en
dc.publisher
ASM International
dc.title
Secondary electron potential contrast for dopant profiling of Silicon Carbide devices
dc.type
Conference Paper
ethz.book.title
ISTFA 2006 : proceedings of the 32nd International Symposium for Testing and Failure Analysis, November 12-16, 2006, Renaissance Austin Hotel, Austin, Texas, USA
ethz.pages.start
279
ethz.pages.end
288
ethz.event
32nd International Symposium for Testing and Failure Analysis (ISTFA)
ethz.event.date
November 12-16, 2006
ethz.notes
.
ethz.publication.place
Materials Park, OH
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.date.deposited
2017-06-09T17:02:05Z
ethz.source
ECIT
ethz.identifier.importid
imp59364e992f2c551226
ethz.ecitpid
pub:67985
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-31T12:21:48Z
ethz.rosetta.lastUpdated
2017-07-31T12:21:48Z
ethz.rosetta.versionExported
true
ethz.COinS
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