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dc.contributor.author
Luisier, Mathieu
dc.date.accessioned
2017-06-09T17:29:06Z
dc.date.available
2017-06-09T17:29:06Z
dc.date.issued
2011-12
dc.identifier.other
10.1109/LED.2011.2168377
dc.identifier.uri
http://hdl.handle.net/20.500.11850/41896
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Electric potential
dc.subject
FETs
dc.subject
Indium gallium arsenide
dc.subject
Logic gates
dc.subject
Performance evaluation
dc.subject
Scattering
dc.subject
Silicon
dc.title
Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultrathin-Body n-FETs
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
32
ethz.journal.issue
12
ethz.pages.start
1686
ethz.pages.end
1688
ethz.notes
Manuscript received 17 August 2011, Revised 6 September 2011, Accepted 7 September 2011.
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York
ethz.publication.status
published
ethz.leitzahl
03228 - Fichtner, Wolfgang
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
03228 - Fichtner, Wolfgang
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.date.deposited
2017-06-09T17:29:38Z
ethz.source
ECIT
ethz.identifier.importid
imp59364eb02d07241314
ethz.ecitpid
pub:69997
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-19T09:05:56Z
ethz.rosetta.lastUpdated
2019-02-02T05:37:43Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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