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dc.contributor.author
Nipoti, Roberta
dc.contributor.author
Parisini, Antonella
dc.contributor.author
Boldrini, Virginia
dc.contributor.author
Vantaggio, Salvatore
dc.contributor.author
Gorni, Marco
dc.contributor.author
Canino, Mariaconcetta
dc.contributor.author
Pizzochero, Giulio
dc.contributor.author
Camarda, Massimo
dc.contributor.author
Woerle, Judith
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2021-04-08T14:59:47Z
dc.date.available
2020-08-10T16:16:04Z
dc.date.available
2020-08-11T05:20:51Z
dc.date.available
2021-04-08T10:25:44Z
dc.date.available
2021-04-08T14:30:51Z
dc.date.available
2021-04-08T14:59:47Z
dc.date.issued
2020-07
dc.identifier.issn
0255-5476
dc.identifier.issn
1662-9752
dc.identifier.other
10.4028/www.scientific.net/msf.1004.698
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/430946
dc.identifier.doi
10.3929/ethz-b-000430946
dc.description.abstract
Van der Pauw devices have been fabricated by double ion implantation processes, namely P+ and Al+ co-implantation. Similarly to the source area in a SiC VD-MOSFET, a 5 × 1018 cm-3 P plateau is formed on the top of a buried 3 × 1018 cm-3 Al distribution for electrical isolation from the n- epilayer. The post implantation annealing temperature was 1600 °C. Annealing times equal to 30 min and 300 min have been compared. The increase of the annealing time produces both an increase of electron density as well as electron mobility. For comparison a HPSI 4H-SiC wafer, 1×1020 cm-3 P+ ion implanted and 1700 °C annealed for 30 min was also characterized.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Trans Tech Publications
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
Al Co-Implantation
en_US
dc.subject
MOSFET
en_US
dc.subject
P Co-Implantation
en_US
dc.subject
P Ion Implantation
en_US
dc.subject
Post Implantation Annealing
en_US
dc.title
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
en_US
dc.type
Conference Paper
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.journal.title
Materials Science Forum
ethz.journal.volume
1004
en_US
ethz.pages.start
698
en_US
ethz.pages.end
704
en_US
ethz.version.deposit
acceptedVersion
en_US
ethz.event
International Conference for Silicon Carbide and Related Materials (ICSCRM 2019)
en_US
ethz.event.location
Kyoto, Japan
en_US
ethz.event.date
September 29 - October 4, 2019
en_US
ethz.publication.place
Bäch
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.date.deposited
2020-08-10T16:16:13Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2020-08-11T05:21:07Z
ethz.rosetta.lastUpdated
2022-03-29T06:27:44Z
ethz.rosetta.versionExported
true
ethz.COinS
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