Switching speed evaluation of e-mode GaN HEMTs in ultra-low inductive switching cell designs

Abstract

The fast intrinsic switching speed and increasing power handling capability of modern enhancement-mode GaN HEMTs makes them promising semiconductor devices to meet the demanding rise and fall time requirements of nanosecond pulse generators. With the steeper voltage transient, it is crucial to design low inductive PCB layouts. There exist low inductive GaN designs, but they have not been analyzed regarding the maximum achievable switching speeds at high pulse currents. Therefore, this paper compares different low inductive switching cell designs using GaN devices in terms of achievable parasitics and switching speeds at high pulse currents.