2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
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Date
2020-07-28Type
- Journal Article
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Cited 33 times in
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Cited 38 times in
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Abstract
Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore’s scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications. Their current versus voltage characteristics are simulated from first-principles, combining density functional theory and advanced quantum transport calculations. Both n- and p-type configurations are considered, with gate lengths ranging from 15 down to 5 nm. From this large collection of electronic materials, we identify 13 compounds with electron and hole currents potentially much higher than those in future Si FinFETs. The resulting database widely expands the design space of 2-D transistors and provides original guidelines to the materials and device engineering community. © 2020 American Chemical Society. Show more
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publishedExternal links
Journal / series
ACS NanoVolume
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Publisher
American Chemical SocietySubject
2-D materials; ab initio device simulations; next-generation field-effect transistors; performance comparison; materials and device parametersOrganisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
Funding
175479 - Ab-initio modeling of electro-thermal effects in 2-D materials: from single-layer to van der Waals heterostructure (ABIME) (SNF)
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Show all metadata
Citations
Cited 33 times in
Web of Science
Cited 38 times in
Scopus
ETH Bibliography
yes
Altmetrics