Show simple item record

dc.contributor.author
Kakarla, Bhagyalakshmi
dc.contributor.author
Tsibizov, Alexander
dc.contributor.author
Stark, Roger
dc.contributor.author
Kovačević-Badstübner, Ivana
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2020-09-29T06:55:45Z
dc.date.available
2020-09-18T02:45:54Z
dc.date.available
2020-09-22T07:57:10Z
dc.date.available
2020-09-29T06:55:45Z
dc.date.issued
2020
dc.identifier.isbn
978-1-7281-4836-6
en_US
dc.identifier.isbn
978-1-7281-4837-3
en_US
dc.identifier.other
10.1109/ISPSD46842.2020.9170121
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/441113
dc.description.abstract
Short circuit (SC) operation can lead to thermal runaway failures of SiC MOSFETs associated with leakage current uncommon to unipolar power devices. This paper presents the physical models required to simulate the leakage current in SiC power MOSFETs during SC accurately. It is shown that the SRH-generation carrier lifetime significantly affects the SC performance of SiC MOSFET, depending on defects in the epitaxial layer and processing induced damage. The temperature and field dependence of carrier lifetime as well as the surface recombination velocity are investigated and their influence on the SC current of a 1.2 kV SiC power MOSFET are presented. © 2020 IEEE
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
short-circuit robustness
en_US
dc.subject
SiC MOSFET
en_US
dc.subject
lifetime
en_US
dc.subject
SRH generation-recombination
en_US
dc.subject
leakage current
en_US
dc.title
Short Circuit Robustness and Carrier Lifetime in Silicon Carbide MOSFETs
en_US
dc.type
Conference Paper
dc.date.published
2020-08-18
ethz.book.title
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
en_US
ethz.pages.start
234
en_US
ethz.pages.end
237
en_US
ethz.event
32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020) (virtual)
en_US
ethz.event.location
Vienna, Austria
en_US
ethz.event.date
September 13-18, 2020
en_US
ethz.notes
Due to the Corona virus (COVID-19) the conference was conducted virtually.
en_US
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2020-09-18T02:46:09Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2020-09-22T07:57:23Z
ethz.rosetta.lastUpdated
2020-09-22T07:57:23Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Short%20Circuit%20Robustness%20and%20Carrier%20Lifetime%20in%20Silicon%20Carbide%20MOSFETs&rft.date=2020&rft.spage=234&rft.epage=237&rft.au=Kakarla,%20Bhagyalakshmi&Tsibizov,%20Alexander&Stark,%20Roger&Kova%C4%8Devi%C4%87-Badst%C3%BCbner,%20Ivana&Grossner,%20Ulrike&rft.isbn=978-1-7281-4836-6&978-1-7281-4837-3&rft.genre=proceeding&rft_id=info:doi/978-1-7281-4836-6&info:doi/978-1-7281-4837-3&rft.btitle=2020%2032nd%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20ICs%20(ISPSD)
 Search via SFX

Files in this item

FilesSizeFormatOpen in viewer

There are no files associated with this item.

Publication type

Show simple item record