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dc.contributor.author
Biela, Jürgen
dc.contributor.author
Aggeler, Daniel
dc.contributor.author
Bortis, Dominik
dc.contributor.author
Kolar, Johann W.
dc.date.accessioned
2020-09-25T13:25:37Z
dc.date.available
2020-09-25T13:19:18Z
dc.date.available
2020-09-25T13:25:37Z
dc.date.issued
2009
dc.identifier.isbn
978-1-4244-4064-1
en_US
dc.identifier.isbn
978-1-4244-4065-8
en_US
dc.identifier.other
10.1109/PPC.2009.5386381
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/442703
dc.description.abstract
In many pulse power applications there is a trend to modulators based on semiconductor technology. For these modulators high voltage and high current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often high power IGBT modules or IGCT devices are used. Since these devices are based on bipolar technology the switching speed is limited and the switching losses are higher. In contrast to bipolar devices unipolar ones (e.g. SiC JFETs) basically offer a better switching performance. Moreover, these devices enable high blocking voltages in case wide band gap materials as for example SiC are used. At the moment SiC JFET devices with a blocking voltage of 1.2kV per JFET are available. Alternatively, the operating voltage could be increased by connecting N JFETs and a low voltage MOSFET in series resulting in a super cascode switch with a blocking voltage N-times higher than the blocking voltage of a single JFET. For the super cascode auxiliary elements are required for achieving a statically and dynamically balanced voltage distribution in the cascode. In this paper a new balancing circuit, which results in faster switching transients and higher possible operating pulse currents is presented and validated by measurement results.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
Balancing circuit for a 5kV/50ns pulsed power switch based on SiC-JFET Super Cascode
en_US
dc.type
Conference Paper
dc.date.published
2010-01-19
ethz.book.title
2009 IEEE Pulsed Power Conference
en_US
ethz.pages.start
635
en_US
ethz.pages.end
640
en_US
ethz.event
17th IEEE International Pulsed Power Conference (PPC 2009)
en_US
ethz.event.location
Washington, DC, USA
en_US
ethz.event.date
June 28 - July 2, 2009
en_US
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2017-06-19T15:24:40Z
ethz.source
ECIT
ethz.identifier.importid
imp59365092da57231301
ethz.identifier.importid
imp59364c606339d70257
ethz.ecitpid
pub:106035
ethz.ecitpid
pub:28042
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2020-09-25T13:19:28Z
ethz.rosetta.lastUpdated
2020-09-25T13:19:28Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/163472
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/16188
ethz.COinS
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