Fully-Passivated AlInN/GaN HEMTs with ft = fmax > 180 GHz

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Author
Tirelli, S.
Marti, D.
Sun, H.
Alt, A.R.
Bolognesi, Colombo R.
Carlin, J.-F.
Py, M.
Grandjean, N.
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Date
2011
Type
    Conference Paper
Publication status
published
Publisher
9th International Conference on Nitride Semiconductors (ICNS 2011)
Event
9th International Conference on Nitride Semiconductors (ICNS 2011), Glasgow, United Kingdom, July 10-15, 2011
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
Notes
Conference lecture on 12 July 2011.
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