AlGaN/GaN High Electron Mobility Transistors Grown on Silicon (110) with RF Performance
dc.contributor.author
Cordier, Yvon
dc.contributor.author
Chmielowska, Magdalena
dc.contributor.author
Ramdani, Mohammed R.
dc.contributor.author
Marti, Diego
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-09T18:28:28Z
dc.date.available
2017-06-09T18:28:28Z
dc.date.issued
2011
dc.identifier.uri
http://hdl.handle.net/20.500.11850/44281
dc.language.iso
en
dc.title
AlGaN/GaN High Electron Mobility Transistors Grown on Silicon (110) with RF Performance
dc.type
Conference Paper
ethz.event
9th International Conference on Nitride Semiconductors (ICNS 2011)
ethz.event.location
Glasgow, Scotland
ethz.event.date
July 10-15, 2011
ethz.publication.place
Glasgow
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-09T18:28:46Z
ethz.source
ECIT
ethz.identifier.importid
imp59364ed85dc7810075
ethz.ecitpid
pub:73108
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-14T23:02:56Z
ethz.rosetta.lastUpdated
2021-02-14T08:23:19Z
ethz.rosetta.versionExported
true
ethz.COinS
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Publikationstyp
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Conference Paper [32942]