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dc.contributor.author
Scheinert, Susanne
dc.contributor.author
Pernstich, Kurt P.
dc.contributor.author
Batlogg, Bertram
dc.contributor.author
Paasch, Gernot
dc.date.accessioned
2017-06-08T16:36:22Z
dc.date.available
2017-06-08T16:36:22Z
dc.date.issued
2007
dc.identifier.issn
0021-8979
dc.identifier.issn
1089-7550
dc.identifier.other
10.1063/1.2803742
dc.identifier.uri
http://hdl.handle.net/20.500.11850/4441
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide
dc.type
Journal Article
ethz.journal.title
Journal of Applied Physics
ethz.journal.volume
102
ethz.journal.issue
10
ethz.journal.abbreviated
J. Appl. Physi.
ethz.pages.start
104503-1
ethz.pages.end
104503-8
ethz.notes
Received 19 July 2007. Accepted 10 September 2007. Published online 21 November 2007..
ethz.identifier.nebis
000037502
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.date.deposited
2017-06-08T16:36:42Z
ethz.source
ECIT
ethz.identifier.importid
imp59364b79d394d60274
ethz.ecitpid
pub:14577
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T00:13:39Z
ethz.rosetta.lastUpdated
2020-02-14T04:33:47Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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