Evaluation of the Imax-fsw-dv/dt Trade-off of High Voltage SiC MOSFETs Based on an Analytical Switching Loss Model
- Conference Paper
Advanced high voltage (3.3-15kV) SiC MOSFETs have been developed for future medium voltage converters over the past decade due to their superior performance. In order to better understand the operation limits and potential of these devices, this paper evaluates the I max -f sw -dv/dt trade-off (maximal current-handling capability at a specific switching frequency and at a defined switching speed) for high voltage SiC MOSFETs based on a proposed linearized analytical switching loss model. There, high voltage SiC MOSFETs manufactured by Cree combined with data from literature for scaling are used as reference. Show more
Book title2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)
Pages / Article No.
SubjectPower semiconductor device; Wide bandgap devices; Silicon Carbide (SiC); MOSFET; Switching losses; Device modeling; Thermal stress
Organisational unit03889 - Biela, Jürgen / Biela, Jürgen
NotesDue to the Coronavirus (COVID-19) the conference was conducted virtually.
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