Mobility and Dit distributions for p-channel MOSFETs with HfO(2)/LaGeO(x) passivating layers on germanium
- Journal Article
Journal / seriesJournal of Applied Physics
Pages / Article No.
PublisherAmerican Institute of Physics
NotesReceived 21 April 2011, Accepted 15 October 2011, Published online 2 December 2011.
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