- Conference Paper
An ultra-compact 3D memristive atomic switch is co-integrated with a field-effect transistor (FET). The combined devices outperform similar state-of-the-art arrangements. The integrated transistor operates with an extremely sharp switching slope of below 3 mV/dec, low leakage below pA and a high current on/off ratio Ion/Ioff < 106. Moreover, our atomic switch features a < 10 ns switching and a < 300 mV operating voltage. Most importantly, the atomic switch has a small footprint of < 10 nm by 10 nm in line with the extreme feature size of the current FET technologies. Thus, this design could addresses the future needs of integrated circuits (ICs) for high integration density at low power consumption. © 2020 Society of Photo-Optical Instrumentation Engineers. Show more
Book titleNanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII
Journal / seriesProceedings of SPIE
Pages / Article No.
SubjectSteep slope; Field effect transistor; Very large scale integration; Sub threshold; Resistive switching; Low-power electronics; Memristor
Organisational unit02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory
03974 - Leuthold, Juerg / Leuthold, Juerg
03925 - Luisier, Mathieu / Luisier, Mathieu
NotesDue to the Coronavirus (COVID-19) the conference was conducted virtually.
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