Degradation of Cu nanowires in a low-reactive plasma environment

Abstract

The quest for miniaturisation of electronic devices is one of the backbones of industry 4.0 and nanomaterials are an envisaged solution capable of addressing these complex technological challenges. When subjected to synthesis and processing, nanomaterials must be able to hold pristine its initial designed properties, but occasionally, this may trigger degradation mechanisms that can impair their application by either destroying their initial morphology or deteriorating of mechanical and electrical properties. Degradation of nanomaterials under processing conditions using plasmas, ion implantation and high temperatures is up to date largely sub-notified in the literature. The degradation of single-crystal Cu nanowires when exposed to a plasma environment with residual active O is herein investigated and reported. It is shown that single-crystal Cu nanowires may degrade even in low-reactive plasma conditions by means of a vapour-solid-solid nucleation and growth mechanism.