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dc.contributor.author
Deng, Marina
dc.contributor.author
Mukherjee, Chhandak
dc.contributor.author
Yadav, Chandan
dc.contributor.author
Frégonèse, Sébastien
dc.contributor.author
Zimmer, Thomas
dc.contributor.author
De Matos, Magali
dc.contributor.author
Quan, Wei
dc.contributor.author
Arabhavi, Akshay Mahadev
dc.contributor.author
Bolognesi, Colombo R.
dc.contributor.author
Wen, Xin
dc.contributor.author
Luisier, Mathieu
dc.contributor.author
Raya, Christian
dc.contributor.author
Ardouin, Bertrand
dc.contributor.author
Maneux, Cristell
dc.date.accessioned
2020-12-18T10:48:19Z
dc.date.available
2020-12-17T14:47:05Z
dc.date.available
2020-12-18T10:48:19Z
dc.date.issued
2020-12
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/TED.2020.3033834
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/456911
dc.description.abstract
This article reports a detailed approach toward optimization of on-wafer thru-reflect-line (TRL) calibration structures for submillimeter-wave characterization of a state-of-the-art indium-phosphide (InP) technology, validated by thorough experimentation and electromagnetic (EM) simulation. The limitations of the existing RF test structures for high-frequency measurements beyond 110 GHz are analyzed through EM simulation. Using an optimization procedure based on calibration of raw EM simulated data, on-wafer TRL calibration structures were developed and fabricated in a subsequent run of this technology. Measurements could be achieved up to 500 GHz on the passive devices and up to 330 GHz on the InP double heterojunction bipolar transistors (DHBTs). The transistor measurements were validated by comparison with the HiCuM compact model simulation to 330 GHz for the InP DHBTs. © 2020 IEEE.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Characterization
en_US
dc.subject
Compact model heterojunction bipolar transistor
en_US
dc.subject
Electromagnetic (EM) simulation high frequency
en_US
dc.subject
Indium-phosphide (InP)
en_US
dc.subject
Submillimeter wave
en_US
dc.subject
Terahertz (THz)
en_US
dc.title
Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz
en_US
dc.type
Journal Article
dc.date.published
2020-11-16
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
67
en_US
ethz.journal.issue
12
en_US
ethz.journal.abbreviated
IEEE Trans. Electron Devices
ethz.pages.start
5441
en_US
ethz.pages.end
5447
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
New York, NY
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2020-12-17T14:47:09Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2020-12-18T10:48:28Z
ethz.rosetta.lastUpdated
2024-02-02T12:42:33Z
ethz.rosetta.versionExported
true
ethz.COinS
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