Alt, Andreas R.
- Journal Article
Journal / seriesIEEE Electron Device Letters
SubjectHigh-electron mobility transistor (HEMT); InP; X-band; Low-noise amplifier (LNA)
Organisational unit03721 - Bolognesi, Colombo
NotesManuscript received 16 October 2011, Revised 9 November 2011, Accepted 12 November 2011, Date of publication 23 December 2011, Date of current version 27 January 2012.
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