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dc.contributor.author
Schuwalow, Sergej
dc.contributor.author
Schröter, Niels B.M.
dc.contributor.author
Gukelberger, Jan
dc.contributor.author
Thomas, Candice
dc.contributor.author
Strocov, Vladimir
dc.contributor.author
Gamble, John
dc.contributor.author
Chikina, Alla
dc.contributor.author
Caputo, Marco
dc.contributor.author
Krieger, Jonas
dc.contributor.author
Gardner, Geoffrey C.
dc.contributor.author
Troyer, Matthias
dc.contributor.author
Aeppli, Gabriel
dc.contributor.author
Manfra, Michael J.
dc.contributor.author
Krogstrup, Peter
dc.date.accessioned
2021-03-05T12:39:05Z
dc.date.available
2021-01-14T03:39:27Z
dc.date.available
2021-01-14T14:08:03Z
dc.date.available
2021-03-05T12:39:05Z
dc.date.issued
2021-02-17
dc.identifier.issn
2198-3844
dc.identifier.other
10.1002/advs.202003087
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/462339
dc.identifier.doi
10.3929/ethz-b-000462339
dc.description.abstract
The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Wiley
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
angle‐resolved photoelectron spectroscopy
en_US
dc.subject
Hybrid interfaces
en_US
dc.subject
Majorana zero modes
en_US
dc.subject
quantum devices
en_US
dc.subject
semiconductors
en_US
dc.subject
topological superconductors
en_US
dc.title
Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2020-12-31
ethz.journal.title
Advanced Science
ethz.journal.volume
8
en_US
ethz.journal.issue
4
en_US
ethz.journal.abbreviated
Adv. Sci.
ethz.pages.start
2003087
en_US
ethz.size
7 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Weinheim
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2021-01-14T03:39:30Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2021-03-05T12:39:17Z
ethz.rosetta.lastUpdated
2022-03-29T05:38:40Z
ethz.rosetta.versionExported
true
ethz.COinS
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