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dc.contributor.author
Xie, Fangqing
dc.contributor.author
Lin, Xiaohang
dc.contributor.author
Groß, Axel
dc.contributor.author
Evers, Ferdinand
dc.contributor.author
Pauly, Fabian
dc.contributor.author
Schimmel, Thomas
dc.date.accessioned
2021-02-23T15:49:53Z
dc.date.available
2021-02-02T10:55:04Z
dc.date.available
2021-02-23T15:49:53Z
dc.date.issued
2017-05-15
dc.identifier.issn
1098-0121
dc.identifier.issn
0163-1829
dc.identifier.issn
1550-235X
dc.identifier.issn
0556-2805
dc.identifier.issn
2469-9969
dc.identifier.issn
1095-3795
dc.identifier.other
10.1103/physrevb.95.195415
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/467253
dc.description.abstract
One focus of nanoelectronics research is to exploit the physical limits in size and energy efficiency. Here, we demonstrate a device in the form of a fully metallic atomic-scale transistor based on a lead (Pb) single-atom quantum point contact. The atomic configuration of the point contact determines the conductance of the Pb atomic-scale transistor. The conductance multiplicity of the Pb single-atom transistor has been confirmed by performing switching between an electrically nonconducting “off-state” and conducting “on-states” at 1 G0 (G0 = 2e2/h, where e is the electron charge, and h Planck's constant), 2.0 G0, 3.0 G0, 1.5 G0, 2.4 G0, 2.7 G0, 2.8 G0, and 5.4 G0, respectively. Our density-functional calculations for various ideal Pb single-atom contacts explain the atomic-configuration-related conductance multiplicity of the Pb single-atom transistor. The performance of the Pb single-atom transistors indicates that both the signatures of atomic valence and conductance quantization play roles in electron transport and bistable reconfiguration. The bistable reconfiguration of the electrode tips is an underlying mechanism in the switching of the Pb atomic-scale transistors. The absolute value of the electrochemical potential applied to the gate electrode is less than 30 mV. This merit suggests Pb [besides silver (Ag)] atomic-scale transistors as potential candidates for the development of electronic circuits with low power consumption. The dimension of the switching unit in the Pb single-atom transistor is in the range of 1 nm, which is much smaller than the projected scaling limit of the gate lengths in silicon transistors (5 nm). Therefore, the metallic single-atom transistors may provide perspectives for electronic applications beyond silicon. ©2017 American Physical Society.
en_US
dc.language.iso
en
en_US
dc.publisher
American Physical Society
en_US
dc.subject
Ballistic transport
en_US
dc.subject
Electrochemistry
en_US
dc.subject
Metals
en_US
dc.title
Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor
en_US
dc.type
Journal Article
ethz.journal.title
Physical Review B
ethz.journal.volume
95
en_US
ethz.journal.issue
19
en_US
ethz.journal.abbreviated
Phys. Rev., B
ethz.pages.start
195415
en_US
ethz.size
8 p.
en_US
ethz.publication.place
Ridge, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
en_US
ethz.tag
Center for Single-Atom Electronics and Photonics
en_US
ethz.date.deposited
2021-02-02T10:55:15Z
ethz.source
FORM
ethz.eth
no
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2021-02-23T15:50:04Z
ethz.rosetta.lastUpdated
2021-02-23T15:50:04Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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