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dc.contributor.author
Puntigam, Lukas
dc.contributor.author
Schultheiß, Jan
dc.contributor.author
Strinic, Ana
dc.contributor.author
Yan, Zewu
dc.contributor.author
Bourret, Edith
dc.contributor.author
Altthaler, Markus
dc.contributor.author
Kézsmárki, Istvan
dc.contributor.author
Evans, Donald M.
dc.contributor.author
Meier, Dennis
dc.contributor.author
Krohns, Stephan
dc.date.accessioned
2021-03-01T11:37:49Z
dc.date.available
2021-02-28T21:54:32Z
dc.date.available
2021-03-01T11:37:49Z
dc.date.issued
2021-02-21
dc.identifier.issn
0021-8979
dc.identifier.issn
1089-7550
dc.identifier.other
10.1063/5.0038300
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/472068
dc.description.abstract
We report the dielectric properties of improper ferroelectric hexagonal (h-)ErMnO3. From the bulk characterization, we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even “colossal” values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode–sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8%) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO3 , by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelectrics.
en_US
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.title
Insulating improper ferroelectric domain walls as robust barrier layer capacitors
en_US
dc.type
Journal Article
dc.date.published
2021-02-16
ethz.journal.title
Journal of Applied Physics
ethz.journal.volume
129
en_US
ethz.journal.issue
7
en_US
ethz.journal.abbreviated
J. Appl. Physi.
ethz.pages.start
074101
en_US
ethz.size
7 p.
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2021-02-28T21:54:43Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2021-03-01T11:38:13Z
ethz.rosetta.lastUpdated
2022-03-29T05:30:36Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Insulating%20improper%20ferroelectric%20domain%20walls%20as%20robust%20barrier%20layer%20capacitors&rft.jtitle=Journal%20of%20Applied%20Physics&rft.date=2021-02-21&rft.volume=129&rft.issue=7&rft.spage=074101&rft.issn=0021-8979&1089-7550&rft.au=Puntigam,%20Lukas&Schulthei%C3%9F,%20Jan&Strinic,%20Ana&Yan,%20Zewu&Bourret,%20Edith&rft.genre=article&rft_id=info:doi/10.1063/5.0038300&
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