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dc.contributor.author
Klinkert, Cedric
dc.contributor.author
Fiore, Sara
dc.contributor.author
Backman, Jonathan
dc.contributor.author
Lee, Youseung
dc.contributor.author
Luisier, Mathieu
dc.date.accessioned
2021-03-15T11:13:26Z
dc.date.available
2021-03-13T04:33:51Z
dc.date.available
2021-03-15T11:13:26Z
dc.date.issued
2021-03
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2021.3055287
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/474241
dc.description.abstract
Two-dimensional materials with strong bandstructure anisotropy such as black phosphorus (BP) have been identified as attractive candidates for logic application due to their potential high carrier velocity and large density-of-states. However, perfectly aligning the source-to-drain axis with the desired crystal orientation remains an experimental challenge. In this letter, we use an advanced quantum transport approach from first-principle to shed light on the influence of orientation misalignments on the performance of BP-based field-effect transistors. Both n -and p -type configurations are investigated for six alignment angles, in the ballistic limit of transport and in the presence of electron-phonon and charged impurity scattering. It is found that up to deviations of 50° from the optimal angle, the ON-state current only decreases by 30%. This behavior is explained by considering a single bandstructure parameter, the effective mass along transport direction.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
2D materials
en_US
dc.subject
black phosphorus
en_US
dc.subject
transistors
en_US
dc.subject
bandstructure anisotropy
en_US
dc.subject
device simulation
en_US
dc.title
Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-Effect Transistors
en_US
dc.type
Journal Article
dc.date.published
2021-01-28
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
42
en_US
ethz.journal.issue
3
en_US
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
434
en_US
ethz.pages.end
437
en_US
ethz.grant
Ab-initio modeling of electro-thermal effects in 2-D materials: from single-layer to van der Waals heterostructure (ABIME)
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.grant.agreementno
175479
ethz.grant.fundername
SNF
ethz.grant.funderDoi
10.13039/501100001711
ethz.grant.program
Projekte MINT
ethz.date.deposited
2021-03-13T04:34:02Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2021-03-15T11:13:39Z
ethz.rosetta.lastUpdated
2022-03-29T05:46:24Z
ethz.rosetta.versionExported
true
ethz.COinS
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