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dc.contributor.author
Biela, Jürgen
dc.contributor.author
Aggeler, Daniel
dc.contributor.author
Bortis, Dominik
dc.contributor.author
Kolar, Johann W.
dc.contributor.editor
Kirkici, Hulya
dc.date.accessioned
2021-08-12T06:13:00Z
dc.date.available
2021-06-02T11:09:02Z
dc.date.available
2021-08-12T06:13:00Z
dc.date.issued
2008
dc.identifier.isbn
978-1-4244-1534-2
en_US
dc.identifier.isbn
978-1-4244-1535-9
en_US
dc.identifier.other
10.1109/IPMC.2008.4743658
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/488051
dc.description.abstract
In many pulse power applications there is a trend to modulators based on semiconductor technology. For these modulators high voltage and high current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often high power IGBT modules or IGCT devices are used. Since these devices are based on bipolar technology the switching speed is limited and the switching losses are higher. In contrast to bipolar devices unipolar ones (e.g. SiC JFETs) basically offer a better switching performance. Moreover, these devices enable high blocking voltages in case large bandgap materials as SiC are used. At the moment SiC JFET devices with a blocking voltage of 1.5 kV per JFET are available. Alternatively, the operating voltage could be increased by connecting N JFETs and a low voltage MOSFET in series resulting in a Super Cascode switch with a blocking voltage N-times higher than the blocking voltage of a single JFET. In order to evaluate the achievable switching speed of the Super Cascode and its applicability in solid state modulators, the performance of such a SiC switch is examined in this paper. Furthermore, the performance of the Super Cascode is compared with 4.5 kV IGBTs made by Powerex, which are mounted in a special low inductive housing for minimising the rise and fall times.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
5kV/200ns Pulsed Power Switch based on a SiC-JFET Super Cascode
en_US
dc.type
Conference Paper
dc.date.published
2009-01-09
ethz.book.title
Proceedings of the 2008 IEEE International Power Modulators and High-Voltage Conference
en_US
ethz.pages.start
358
en_US
ethz.pages.end
361
en_US
ethz.event
2008 IEEE International Power Modulator Conference and 26th International Power Modulator Symposium and 2008 High Voltage Workshop (PMC 2008)
en_US
ethz.event.location
Las Vegas, NV, USA
en_US
ethz.event.date
May 27-31, 2008
en_US
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2017-06-10T16:48:51Z
ethz.source
ECIT
ethz.identifier.importid
imp59365093bc63c58473
ethz.identifier.importid
imp59364c60616aa14698
ethz.ecitpid
pub:106093
ethz.ecitpid
pub:28041
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2021-06-02T11:09:12Z
ethz.rosetta.lastUpdated
2022-03-29T11:01:29Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/66599
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/16187
ethz.COinS
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