Abstract
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (∼375°C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neuralnetwotk inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed. Show more
Publication status
publishedExternal links
Book title
2021 IEEE International Memory Workshop (IMW)Pages / Article No.
Publisher
IEEEEvent
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