Dislocation Reduction by Glide in Epitaxial IV-VI Layers on Si Substrates

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Author
Zogg, H.
Date
2012-07
Type
    Journal Article
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-b-000049491
Publication status
published
External links
Journal / series
Journal of Electronic Materials
Volume
41(7)
Pages / Article No.
1931 - 1935
Publisher
TMS
Subject
Molecular beam epitaxy; Heteroepitaxy; Dislocation reduction; Lead chalcogenides
Notes
Received 5 November 2011, Accepted 20 February 2012, Published online 16 March 2012. It was possible to publish this article open access thanks to a Swiss National Licence with the publisher
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Citations
Cited 4 times in Web of Science
ETH Bibliography
yes
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