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dc.contributor.author
Etzelmüller Bathen, Marianne
dc.contributor.author
Galeckas, Augustinas
dc.contributor.author
Karsthof, Robert
dc.contributor.author
Delteil, Aymeric
dc.contributor.author
Sallet, Vincent
dc.contributor.author
Kuznetsov, Andrej Yu
dc.contributor.author
Vines, Lasse
dc.date.accessioned
2021-07-30T08:49:44Z
dc.date.available
2021-07-24T02:33:56Z
dc.date.available
2021-07-30T08:18:42Z
dc.date.available
2021-07-30T08:49:44Z
dc.date.issued
2021-07-15
dc.identifier.issn
1098-0121
dc.identifier.issn
0163-1829
dc.identifier.issn
1550-235X
dc.identifier.issn
0556-2805
dc.identifier.issn
2469-9969
dc.identifier.issn
1095-3795
dc.identifier.issn
2469-9950
dc.identifier.other
10.1103/PhysRevB.104.045120
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/497411
dc.identifier.doi
10.3929/ethz-b-000497411
dc.description.abstract
Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication, and sensing applications. However, factors such as emission brightness, purity. and indistinguishability are limited by interactions between localized defect states and the surrounding environment. Therefore, it is important to map the full emission spectrum from each SPE, to understand the complex interplay between the different defect configurations, their surroundings, and external perturbations. Herein, we investigate a family of regularly spaced sharp luminescence peaks appearing in the near-infrared portion of photoluminescence (PL) spectra from n-type 4H-SiC samples after irradiation. This periodic emitter family, labeled the L lines, is only observed when the zero-phonon line signatures of the negatively charged Si vacancy (so-called V lines) are present. The L lines appear with 1.45 meV and 1.59 meV energy spacing after H and He irradiation and increase linearly in intensity with fluence-reminiscent of the intrinsic defect trend. Furthermore, we monitor the dependence of the L-line emission energy and intensity on heat treatments, electric field strength, and PL collection temperature, discussing these data in the context of the L lines. Based on the strong similarity between the irradiation, electric field, and thermal responses of the L and V lines, the L lines are attributed to the Si vacancy in 4H-SiC. The regular and periodic appearance of the L lines provides strong arguments for a vibronic origin explaining the oscillatory multipeak spectrum. To account for the small energy separation of the L lines, we propose a model based on rotations of distortion surrounding the Si vacancy driven by a dynamic Jahn-Teller effect.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
American Physical Society (APS)
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.title
Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide
en_US
dc.type
Journal Article
dc.rights.license
In Copyright - Non-Commercial Use Permitted
dc.date.published
2021-07-12
ethz.journal.title
Physical Review B
ethz.journal.volume
104
en_US
ethz.journal.issue
4
en_US
ethz.journal.abbreviated
Phys. Rev., B
ethz.pages.start
045120
en_US
ethz.size
13 p.; 13 p. accepted version
en_US
ethz.version.deposit
acceptedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
College Park, MD
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.date.deposited
2021-07-24T02:34:17Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2021-07-30T08:49:49Z
ethz.rosetta.lastUpdated
2022-03-29T10:49:35Z
ethz.rosetta.versionExported
true
ethz.COinS
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