- Conference Paper
InP/GaAsSb-based Double Heterojunction Bipolar Transistors (DHBTs) with an excellent combination of high f(MAX) (> 650 GHz) and high breakdown voltage (> 5 V), are promising candidates for mm- and sub-mm-wave applications. In this work, we present a 300-nm InP/GaAsSb DHBT technology for monolithic millimeter-wave integrated circuit (MMIC) design. Using this technology, a broadband one-stage cascode amplifier exhibiting a small-signal gain similar to 7.2 dB from 140 to 190 GHz with a 3-dB bandwidth of more than 56 GHz was achieved. Show more
Book title2020 50th European Microwave Conference (EuMC)
Pages / Article No.
SubjectInP/GaAsSb; double heterojunction bipolar transistors (DHBTs); load-pull; broadband amplifier; G-Band
Organisational unit03721 - Bolognesi, Colombo / Bolognesi, Colombo
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